Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes | ACS Applied Materials & Interfaces
![Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology | Semantic Scholar Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/72511413eadc50b58ac259d013b7714786085c09/2-Figure1-1.png)
Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology | Semantic Scholar
![NS301 | Noise generator diode, 10 Hz - 3 GHz, 8/12V, 5mA, output level 30/35dBENR -144/-139dBm/Hz, SMD SOD-323 package | Buy on-line | rf-microwave.com NS301 | Noise generator diode, 10 Hz - 3 GHz, 8/12V, 5mA, output level 30/35dBENR -144/-139dBm/Hz, SMD SOD-323 package | Buy on-line | rf-microwave.com](https://www.rf-microwave.com/resources/gallery/full/5a43849228a81.jpg)
NS301 | Noise generator diode, 10 Hz - 3 GHz, 8/12V, 5mA, output level 30/35dBENR -144/-139dBm/Hz, SMD SOD-323 package | Buy on-line | rf-microwave.com
![Electronics | Free Full-Text | Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes Electronics | Free Full-Text | Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes](https://www.mdpi.com/electronics/electronics-08-01450/article_deploy/html/images/electronics-08-01450-g001.png)
Electronics | Free Full-Text | Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes
![Figure 1 from A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization | Semantic Scholar Figure 1 from A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/13c4e1f8e922091b5d30487463ac3c40e04efc11/2-Figure3-1.png)
Figure 1 from A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization | Semantic Scholar
![100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale | Nature Portfolio Engineering Community 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale | Nature Portfolio Engineering Community](https://images.zapnito.com/cdn-cgi/image/metadata=copyright,fit=scale-down,format=auto,sharpen=1,quality=95/https://images.zapnito.com/users/439928/posters/1603131210-43-2939/98b3c3e8-b4cc-4338-898e-242197d591d3_large.jpeg)
100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale | Nature Portfolio Engineering Community
![Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology | Semantic Scholar Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/72511413eadc50b58ac259d013b7714786085c09/7-Figure18-1.png)
Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology | Semantic Scholar
![Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown | Semantic Scholar Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/4378263c69f149ed113177331a0a10237f55065a/32-Figure2-12-1.png)
Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown | Semantic Scholar
![Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown | Semantic Scholar Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/4378263c69f149ed113177331a0a10237f55065a/28-Figure2-10-1.png)
Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown | Semantic Scholar
![NS303 | Noise generator diode, 10 Hz - 10 GHz, 8/12V, 8mA, output level 30/35dBENR -144/-139dBm/Hz, gold plated ceramic package | Buy on-line | rf-microwave.com NS303 | Noise generator diode, 10 Hz - 10 GHz, 8/12V, 8mA, output level 30/35dBENR -144/-139dBm/Hz, gold plated ceramic package | Buy on-line | rf-microwave.com](https://www.rf-microwave.com/resources/gallery/full/5a43849228ac9.jpg)